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Schottky Barrier Diodes (SBD)
MA3D798
Silicon epitaxial planar type (cathode common)
Unit : mm
For switching power supply
9.9 0.3
4.6 0.2
15.0 0.5
I Features
* TO-220D package * Allowing to rectify under (IF(AV) = 20 A) condition * Cathode common dual type * Low VF (forward voltage) type: VF < 0.47 V (at IF = 10 A)
3.2 0.1
13.7 0.2 4.2 0.2
1.4 0.2 1.6 0.2 0.8 0.1 2.54 0.3 3 5.08 0.5
3.0 0.5
2.9 0.2
2.6 0.1
0.55 0.15
I Absolute Maximum Ratings Ta = 25C
Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 30 20 120 -40 to +125 -40 to +125 Unit V A A C C
1
2
1 : Anode 2 : Cathode (common) 3 : Anode TO-220D package
Note) * : Half sine-wave; 10 ms/cycle
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) High voltage rectification Symbol IR VF Rth(j-c) VR = 30 V IF = 10 A Direct current (between junction and case) Conditions Min Typ Max 5 0.47 3 Unit mA V C/W
Note) Rated input/output frequency: 150 MHz
1
MA3D798
IF V F
102 Ta = 125C 75C 25C - 20C 103
Schottky Barrier Diodes (SBD)
IR V R
102
IR Ta
VR = 30 V 20 V 10 V
10
102
Reverse current IR (mA)
Reverse current IR (mA)
Ta = 125C
10
Forward current IF (A)
1
10 75C 1
1
10-1
10-1
10-2
10-1
25C
10-2
10-3
0
0.2
0.4
0.6
0.8
1.0
1.2
10-2
0
10
20
30
40
50
60
10-3 -40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
VF Ta
0.8 0.7
Forward voltage VF (V)
0.6 0.5 0.4 0.3 5A 0.2 0.1 0 -40 1A IF = 10 A
0
40
80
120
160
200
Ambient temperature Ta (C)
2

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